Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

نویسندگان

  • P. Shiktorov
  • E. Starikov
  • V. Gružinskis
  • L. Varani
  • J. C. Vaissière
  • L. Reggiani
  • S. Pérez
چکیده

P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, J.C. Vaissière, L. Reggiani, S. Pérez and T. González Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania CEM2 — Centre d’Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France INFM — National Nanotechnology Laboratory, Dipartimento di Ingegneria dell’ Innovazione, Università di Lecce, Via Arnesano s/n, 73100 Lecce, Italy Departamento de F́ısica Aplicada, Universidad de Salamanca Plaza de la Merced s/n, 37008 Salamanca, Spain

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

An Heterojunction Schottky Barrier Diode with RTD Emitter

The possible application of Schottky diodes as detector elements in receivers and image sensing systems operating in the THz frequency range has been demonstrated in the literature. In addition to metal-semiconductor (M-S) Schottky diodes, the use of heterojunction Schottky barrier diodes for detection and mixing applications has also been explored. Such diodes require lower d.c. bias voltages,...

متن کامل

Considerations for Homodyne Detection Systems

The effects of modulation frequency, RF reference power, and external bias upon the sensitivity and dynamic range of microwave homodyne detection systems was measured for point contact diodes and low l/f noise Schottky and backward diodes. The measurements were made at 4.89 GHz using a signal to noise ratio of 3 dB and a detection system bandwidth of 10 Hz. Maximum sensitivities of -135, -150, ...

متن کامل

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...

متن کامل

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

متن کامل

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range o...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005